Lecturer

MD. MEFTAHUL HAQUE 

Email: meftahul@ius.edu.bd

Phone: +8801521305924

Educational Qualifications:

Job experience: 

Publications:

1. INVESTIGATING THE ELECTRONIC PROPERTIES OF 3D BISMUTH SELENIDE (Bi2Se3) SLAB: FOCUS ON TOPOLOGICAL SURFACE STATES

      Abstract: This study explores the electronic properties of a three-dimensional (3D) bismuth selenide (Bi2Se3) slab, a well-known topological insulator, through detailed band structure analysis. Using first-principles calculations based on density functional theory (DFT), the band structure reveals the unique electronic behavior of Bi2Se3 with a focus on its surface states and bulk insulating characteristics. The results demonstrate the presence of a bulk band gap with linearly dispersed gapless surface states, confirming the topological nature of the material. These surface states are protected by time-reversal symmetry and form Dirac-like cones at the Gamma point. The findings provide insight into the potential applications of Bi2Se3 in spintronics and quantum computing due to its robust surface conductivity and insulating bulk behavior. Future work will focus on the effect of external perturbations, such as strain and doping, on the band structure to further explore the tunability of its electronic properties.

    2. Topological electronic properties of Bismuth Selenide nanoribbon slab with zigzag edge

    Abstract: A 3D topological insulator based on Bismuth Selenide (Bi₂Se₃) slab has been investigated. In this study, using density functional theory (DFT) and a Wannier-based tightbinding model, we computed various electronic properties, including the band structure and local density of states (LDOS) for both bulk Bi₂Se₃ slab and its zigzag-edged nanoribbon counterpart. The band structure reveals that Bi₂Se₃ slabs exhibit surface states with a Dirac cone at the Gamma point. From the LDOS analysis, we find that allowed density of states are confined to the surfaces of the zigzag nanoribbon slab. This study provides valuable insights for designing future device applications.

     3. Performance Analysis of Inverted F Antenna Using Slotted Patch 

    Abstract: The design and the simulation of a Planar Inverted-F Antenna (PIFA) is presented in this paper which is suitable for satellite and different wireless communications. This antenna is designed by FR4 substrate and slotted patch. Using the CST Studio Suite simulator different type of antenna parameters such as the return loss, VSWR, radiation pattern and directivity are analyzed. The designed antenna is successfully simulated. It operates at the frequency range from 6.0 GHz to 6.33 GHz with an outstanding VSWR value of 1.09. For the comfortable size and not big profile, the proposed antenna stands as a suitable candidate for many types of wireless communications like satellite, radar, etc. 

Training:

Honors and Awards:

Research Interest: 

• Nanoelectronics
• Quantum Mechanics
• Photonic

Extracurricular activities: 

• Co-Mentor, “AMADER KOTHA” Program on Bangladesh Television (BTV) for Four Episodes.